Auflistung nach Schlagwort "Interstitial boron"

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  • Lifetime degradation mechanism in boron-doped Czochralski silicon 
    Voronkov, Vladimir V.; Falster, Robert; Batunina, A.V.; MacDonald, D.; Bothe, Karsten; Schmidt, J. (London : Elsevier Ltd., 2011)
    The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, ...